Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots

We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it has a smaller effect on WZ GaN/AlGaN, and very little effect on ZB GaN/AlN quantum dots. As a result, the exciton ground state energy in WZ GaN/AlN quantum dots, with heights larger than 3 nm, exhibits a red shift with respect to the bulk WZ GaN energy gap. The radiative decay time of the red-shifted transitions is large and increases almost exponentially from 6.6 ns for quantum dots with height 3 nm to 1100 ns for the quantum dots with height 4.5 nm. In WZ GaN/AlGaN quantum dots, both the radiative decay time and its increase with quantum dot height are smaller than those in WZ GaN/AlN quantum dots. On the other hand, the radiative decay time in ZB GaN/AlN quantum dots is of the order of 0.3 ns, and is almost independent of the quantum dot height. Our results are in good agreement with available experimental data and can be used to optimize GaN quantum dot parameters for proposed optoelectronic applications.Comment: 18 pages, accepted for publication in the Journal of Applied Physic

Photoluminescence of tetrahedral quantum-dot quantum wells

Taking into account the tetrahedral shape of a quantum dot quantum well (QDQW) when describing excitonic states, phonon modes and the exciton-phonon interaction in the structure, we obtain within a non-adiabatic approach a quantitative interpretation of the photoluminescence (PL) spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast to the dark ground state for a spherical QDQW.Comment: 4 pages, 2 figure

Polar optical phonons in wurtzite spheroidal quantum dots: Theory and application to ZnO and ZnO/MgZnO nanostructures

Polar optical-phonon modes are derived analytically for spheroidal quantum dots with wurtzite crystal structure. The developed theory is applied to a freestanding spheroidal ZnO quantum dot and to a spheroidal ZnO quantum dot embedded into a MgZnO crystal. The wurtzite (anisotropic) quantum dots are shown to have strongly different polar optical-phonon modes in comparison with zincblende (isotropic) quantum dots. The obtained results allow one to explain and accurately predict phonon peaks in the Raman spectra of wurtzite nanocrystals, nanorods (prolate spheroids), and epitaxial quantum dots (oblate spheroids).Comment: 11 page

Size distributions of cadmium sulfide nanoparticles obtained from templating methods

Cadmium sulfide (CdS) nanoparticles were obtained by soft templating methods using either an already established revered micelle route or a new procedure based on gel electrophoresis. The UV-Vis absorption or the photoluminescence excitation spectra were fitted using the CdS electronic structure available in the literature together with a size distribution. The obtained results indicate that the amount of sodium dodecyl sulphate as a component of the agarose gel formulation has a profound effect on the resulting nanoparticle population. © 2008 New York Academy of Sciences.(undefined

Electron and hole states in quantum-dot quantum wells within a spherical 8-band model

In order to study heterostructures composed both of materials with strongly different parameters and of materials with narrow band gaps, we have developed an approach, which combines the spherical 8-band effective-mass Hamiltonian and the Burt's envelope function representation. Using this method, electron and hole states are calculated in CdS/HgS/CdS/H_2O and CdTe/HgTe/CdTe/H_2O quantum-dot quantum-well heterostructures. Radial components of the wave functions of the lowest S and P electron and hole states in typical quantum-dot quantum wells (QDQWs) are presented as a function of radius. The 6-band-hole components of the radial wave functions of an electron in the 8-band model have amplitudes comparable with the amplitude of the corresponding 2-band-electron component. This is a consequence of the coupling between the conduction and valence bands, which gives a strong nonparabolicity of the conduction band. At the same time, the 2-band-electron component of the radial wave functions of a hole in the 8-band model is small compared with the amplitudes of the corresponding 6-band-hole components. It is shown that in the CdS/HgS/CdS/H_2O QDQW holes in the lowest states are strongly localized in the well region (HgS). On the contrary, electrons in this QDQW and both electron and holes in the CdTe/HgTe/CdTe/H_2O QDQW are distributed through the entire dot. The importance of the developed theory for QDQWs is proven by the fact that in contrast to our rigorous 8-band model, there appear spurious states within the commonly used symmetrized 8-band model.Comment: 15 pages, 5 figures, E-mail addresses: [email protected], [email protected]

Development of an eight-band theory for quantum-dot heterostructures

We derive a nonsymmetrized 8-band effective-mass Hamiltonian for quantum-dot heterostructures (QDHs) in Burt's envelope-function representation. The 8x8 radial Hamiltonian and the boundary conditions for the Schroedinger equation are obtained for spherical QDHs. Boundary conditions for symmetrized and nonsymmetrized radial Hamiltonians are compared with each other and with connection rules that are commonly used to match the wave functions found from the bulk kp Hamiltonians of two adjacent materials. Electron and hole energy spectra in three spherical QDHs: HgS/CdS, InAs/GaAs, and GaAs/AlAs are calculated as a function of the quantum dot radius within the approximate symmetrized and exact nonsymmetrized 8x8 models. The parameters of dissymmetry are shown to influence the energy levels and the wave functions of an electron and a hole and, consequently, the energies of both intraband and interband transitions.Comment: 36 pages, 10 figures, E-mail addresses: [email protected], [email protected]

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).Comment: 21 pages, 4 figures. arXiv admin note: text overlap with arXiv:0904.369

Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires

The electronic properties of heterojunction electron gases formed in GaN/AlGaN core/shell nanowires with hexagonal and triangular cross-sections are studied theoretically. We show that at nanoscale dimensions, the non-polar hexagonal system exhibits degenerate quasi-one-dimensional electron gases at the hexagon corners, which transition to a core-centered electron gas at lower doping. In contrast, polar triangular core/shell nanowires show either a non-degenerate electron gas on the polar face or a single quasi-one-dimensional electron gas at the corner opposite the polar face, depending on the termination of the polar face. More generally, our results indicate that electron gases in closed nanoscale systems are qualitatively different from their bulk counterparts.Comment: 16 pages, 7 figures. To appear in Nano Letters. Corrected some typo

Phonons in Slow Motion: Dispersion Relations in Ultra-Thin Si Membranes

We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silicon membranes as thin as \sim 8 nm. We observe a reduction of the phase and group velocities of the fundamental flexural mode by more than one order of magnitude compared to bulk values. The modification of the dispersion relation in nanostructures has important consequences for noise control in nano and micro-electromechanical systems (MEMS/NEMS) as well as opto-mechanical devices.Comment: 5 page

Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct current electrodeposition of ZnO. It makes the whole fabrication process low-cost, compatible with Complementary Metal-Oxide Semiconductor technology, scalable and easily industrialised. The photoluminescence spectra of the porous Si/ZnO nanostructures reveal a correlation between the lineshape, as well as the strength of the emission, with the morphology of the underlying porous Si, that control the induced defects in the ZnO. Appropriate fabrication conditions of the porous Si lead to exceptionally bright Gaussian-type emission that covers almost the entire visible spectrum, indicating that porous Si/ZnO nanostructures could be a cornerstone material towards white-light-emitting devices